Apparent Kondo effect in Moiré transition metal dichalcogenide bilayers: Heavy fermions versus disorder

A recent work by Zhao et al. [1] reports the realization of a synthetic Kondo lattice in gate-tunable Moir\'e TMD bilayer system. The observation is supported plateau (or dip, depending on filling) temperature dependence resistivity $\rho(T)$ around $T^*\sim 40~$K, which interpreted as scale, and an apparent enhancement carrier mass extracted from low-temperature data, indicating emergence `heavy fermions'. latter crucially based assumption that primary resistive scattering mechanism Umklapp electron-electron underlying Fermi liquid. In this work, we analyze experimental data under not scattering, but Coulomb random quenched charged impurities phonon scattering. We show combination impurity plausible alternative explanation for observed can describe key features even if no has formed, further theoretical needed to conclusively verify formation Ref. [1]. W. Zhao, B. Shen, Z. Tao, Han, K. Kang, Watanabe, T. Taniguchi, F. Mak, J. Shan, arXiv:2211.00263 (2022).